Control of structural defects in group III V N alloys grown on Si
- 9 July 2002
- journal article
- Published by IOP Publishing in Semiconductor Science and Technology
- Vol. 17 (8), 762-768
- https://doi.org/10.1088/0268-1242/17/8/304
Abstract
No abstract availableThis publication has 19 references indexed in Scilit:
- Control of N Content of GaPN Grown by Molecular Beam Epitaxy and Growth of GaPN Lattice Matched to Si(100) SubstrateJapanese Journal of Applied Physics, 2002
- Dislocation-free and lattice-matched Si/GaP1−xNx/Si structure for photo-electronic integrated systemsApplied Physics Letters, 2001
- Dislocation-free GaAsyP1−x−yNx/GaP0.98N0.02 quantum-well structure lattice- matched to a Si substrateApplied Physics Letters, 2001
- High-Quality GaAsxP1-x/In0.13Ga0.87P Quantum Well Structure Grown on Si Substrate with a Very Few Threading DislocationsJapanese Journal of Applied Physics, 1999
- Generation and suppression process of crystalline defects in GaP layers grown on misoriented Si(1 0 0) substratesJournal of Crystal Growth, 1998
- N incorporation in GaP and band gap bowing of GaNxP1−xApplied Physics Letters, 1996
- Extremely large N content (up to 10%) in GaNAs grown by gas-source molecular beam epitaxyJournal of Crystal Growth, 1996
- Observation of Threading Dislocation Generation Process in Highly Lattice-Mismatched HeteroepitaxyJapanese Journal of Applied Physics, 1994
- Gas-Source Molecular Beam Epitaxy of GaNxAs1-x Using a N Radical as the N SourceJapanese Journal of Applied Physics, 1994
- Symmetric arsenic dimers on the Si(100) surfacePhysical Review Letters, 1986