Dislocation-free and lattice-matched Si/GaP1−xNx/Si structure for photo-electronic integrated systems
- 17 December 2001
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 79 (25), 4151-4153
- https://doi.org/10.1063/1.1425451
Abstract
We proposed a Si/III–V–N compound semiconductors/Si structure, which is applicable to optoelectronic integrated circuits (OEICs). The feature of this structure is that optoelectronic devices and Si electronic devices could be fabricated by low-temperature planar process at the same time. A dislocation-free and lattice-matched Si/GaP1−xNx/Si (x=2.9%) structure, which is a basic structure for OEICs, was grown by molecular-beam epitaxy. The images of transmission electron microscopy revealed that there were no threading dislocations and misfit dislocations in the epitaxial layers. It was clarified that the Si and GaP1−xNx layers were lattice-matched to Si and had structural high crystalline quality comparable to Si substrates.Keywords
This publication has 12 references indexed in Scilit:
- Dislocation-free GaAsyP1−x−yNx/GaP0.98N0.02 quantum-well structure lattice- matched to a Si substrateApplied Physics Letters, 2001
- High-Quality GaAsxP1-x/In0.13Ga0.87P Quantum Well Structure Grown on Si Substrate with a Very Few Threading DislocationsJapanese Journal of Applied Physics, 1999
- Reduction of Point Defects and Formation of Abrupt Hetero-Interfaces in Low-Temperature Molecular Beam Epitaxy of GaAs and GaP under Atomic Hydrogen IrradiationJapanese Journal of Applied Physics, 1998
- Generation and suppression process of crystalline defects in GaP layers grown on misoriented Si(1 0 0) substratesJournal of Crystal Growth, 1998
- Suppression of threading dislocation generation in GaAs-on-Si with strained short-period superlatticesJournal of Crystal Growth, 1995
- Growth of GaAsN alloys by low-pressure metalorganic chemical vapor deposition using plasma-cracked NH3Applied Physics Letters, 1993
- Optoelectronic Devices and Material Technologies for Photo-Electronic Integrated SystemsJapanese Journal of Applied Physics, 1993
- Luminescence quenching and the formation of the GaP1−xNx alloy in GaP with increasing nitrogen contentApplied Physics Letters, 1992
- Low Temperature Surface Cleaning of Silicon and Its Application to Silicon MBEJournal of the Electrochemical Society, 1986
- Molecular beam epitaxy of silicon: Effects of heavy Sb dopingJournal of Crystal Growth, 1981