Observation of Threading Dislocation Generation Process in Highly Lattice-Mismatched Heteroepitaxy
- 1 December 1994
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 33 (12B), L1740
- https://doi.org/10.1143/jjap.33.l1740
Abstract
The generation process of threading dislocations in highly lattice-mismatched heteroepitaxy was investigated by transmission electron microscopy (TEM). In the growth of InAs epilayers on GaAs substrate, the misfit strain was partially accommodated by the formation of coherent three-dimensional islands before the generation of misfit dislocations. However, the misfit dislocation was eventually introduced in each grown three-dimensional island in order to relieve the misfit strain. It was clearly shown that the misfit dislocations propagate towards the growth direction; i.e., threading dislocations originated from the grown islands.Keywords
This publication has 14 references indexed in Scilit:
- Growth mechanism of (InAs)m(GaAs)n strained short-period superlattices grown by molecular beam epitaxyJournal of Applied Physics, 1993
- Material and electrical properties of highly mismatched InxGa1−xAs on GaAs by molecular-beam epitaxyJournal of Applied Physics, 1993
- Suppression of threading dislocation generation in highly lattice mismatched heteroepitaxies by strained short-period superlatticesApplied Physics Letters, 1993
- Anisotropic relaxation of misfit strain in GaAs films grown on GAP (001)Journal of Crystal Growth, 1993
- Optoelectronic Devices and Material Technologies for Photo-Electronic Integrated SystemsJapanese Journal of Applied Physics, 1993
- Threading dislocations in InxGa1−xAs/GaAs heterostructuresJournal of Applied Physics, 1992
- GaAs Heteroepitaxial Growth on an InP (001) SubstrateJapanese Journal of Applied Physics, 1991
- Effect of strain on surface morphology in highly strained InGaAs filmsPhysical Review Letters, 1991
- Dislocation-free Stranski-Krastanow growth of Ge on Si(100)Physical Review Letters, 1990
- Surface Lattice Strain Relaxation at the Initial Stage of Heteroepitaxial Growth of InxGa1-xAs on GaAs by Molecular Beam EpitaxyJapanese Journal of Applied Physics, 1989