Nonparabolic coupled Poisson-Schrödinger solutions for quantized electron accumulation layers: Band bending, charge profile, and subbands at InN surfaces
- 5 March 2008
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 77 (12), 125305
- https://doi.org/10.1103/physrevb.77.125305
Abstract
The one-electron potential, carrier concentration profile, quantized subband state energies, and parallel dispersion relations are calculated for an accumulation layer at a semiconductor surface by solving Poisson’s equation within a modified Thomas-Fermi approximation and numerically solving the Schrödinger equation for the resulting potential well. A nonparabolic conduction band, described within the Kane approximation, is incorporated in the model. Example calculations are performed for a typical clean InN surface and for a variety of surface state densities and bulk carrier concentrations. Agreement is found between the model calculations and experimental measurements of the subband energies and dispersions at -plane InN surfaces from electron tunneling spectroscopy and angle resolved photoemission spectroscopy.
Keywords
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