Doping‐dependence of subband energies in quantized electron accumulation at InN surfaces
- 1 February 2007
- journal article
- research article
- Published by Wiley in Physica Status Solidi (a)
- Vol. 204 (2), 536-542
- https://doi.org/10.1002/pssa.200673226
Abstract
No abstract availableKeywords
This publication has 21 references indexed in Scilit:
- Quantized Electron Accumulation States in Indium Nitride Studied by Angle-Resolved Photoemission SpectroscopyPhysical Review Letters, 2006
- Scanning tunnelling spectroscopy of quantized electron accumulation at InxGa1−xN surfacesPhysica Status Solidi (a), 2006
- On the crystalline structure, stoichiometry and band gap of InN thin filmsApplied Physics Letters, 2005
- Temperature invariance ofelectron accumulationPhysical Review B, 2004
- Investigation of multiple carrier effects in InN epilayers using variable magnetic field Hall measurementsJournal of Crystal Growth, 2004
- Indium nitride: Evidence of electron accumulationJournal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 2004
- Origin of electron accumulation at wurtzite InN surfacesPhysical Review B, 2004
- Intrinsic Electron Accumulation at Clean InN SurfacesPhysical Review Letters, 2004
- X-ray photoemission spectroscopic investigation of surface treatments, metal deposition, and electron accumulation on InNApplied Physics Letters, 2003
- Surface charge accumulation of InN films grown by molecular-beam epitaxyApplied Physics Letters, 2003