Scanning tunnelling spectroscopy of quantized electron accumulation at InxGa1−xN surfaces
- 2 January 2006
- journal article
- research article
- Published by Wiley in Physica Status Solidi (a)
- Vol. 203 (1), 85-92
- https://doi.org/10.1002/pssa.200563522
Abstract
No abstract availableKeywords
This publication has 29 references indexed in Scilit:
- Acceptor states in the photoluminescence spectra ofPhysical Review B, 2005
- Fermi-level stabilization energy in group III nitridesPhysical Review B, 2005
- Temperature invariance ofelectron accumulationPhysical Review B, 2004
- Investigation of multiple carrier effects in InN epilayers using variable magnetic field Hall measurementsJournal of Crystal Growth, 2004
- Indium nitride: Evidence of electron accumulationJournal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 2004
- Origin of electron accumulation at wurtzite InN surfacesPhysical Review B, 2004
- Energy position of near-band-edge emission spectra of InN epitaxial layers with different doping levelsPhysical Review B, 2004
- Intrinsic Electron Accumulation at Clean InN SurfacesPhysical Review Letters, 2004
- X-ray photoemission spectroscopic investigation of surface treatments, metal deposition, and electron accumulation on InNApplied Physics Letters, 2003
- Surface charge accumulation of InN films grown by molecular-beam epitaxyApplied Physics Letters, 2003