The resistive switching characteristics in TaON films for nonvolatile memory applications
- 15 January 2013
- journal article
- Published by Elsevier BV in Thin Solid Films
- Vol. 528, 224-228
- https://doi.org/10.1016/j.tsf.2012.09.081
Abstract
No abstract availableKeywords
Funding Information
- National Science Council (NSC 100-2120-M-110-003)
- National Science Council (NSC 100-2120-M-110-003)
This publication has 23 references indexed in Scilit:
- Developments in nanocrystal memoryMaterials Today, 2011
- Redox Reaction Switching Mechanism in RRAM Device With $\hbox{Pt/CoSiO}_{X}\hbox{/}\hbox{TiN}$ StructureIEEE Electron Device Letters, 2011
- Influence of Bias-Induced Copper Diffusion on the Resistive Switching Characteristics of a SiON Thin FilmElectrochemical and Solid-State Letters, 2011
- Electrical Manipulation of Nanofilaments in Transition-Metal Oxides for Resistance-Based MemoryNano Letters, 2009
- Resistance Switching and Formation of a Conductive Bridge in Metal/Binary Oxide/Metal Structure for Memory DevicesJapanese Journal of Applied Physics, 2008
- Nickel nanocrystals with HfO2 blocking oxide for nonvolatile memory applicationApplied Physics Letters, 2007
- Memory characteristics of Co nanocrystal memory device with HfO2 as blocking oxideApplied Physics Letters, 2007
- Ferroelectric thin films: Review of materials, properties, and applicationsJournal of Applied Physics, 2006
- Reproducible resistance switching in polycrystalline NiO filmsApplied Physics Letters, 2004
- Progress and outlook for MRAM technologyIEEE Transactions on Magnetics, 1999