Influence of Bias-Induced Copper Diffusion on the Resistive Switching Characteristics of a SiON Thin Film
- 1 January 2011
- journal article
- Published by The Electrochemical Society in Electrochemical and Solid-State Letters
- Vol. 14 (2), H93-H95
- https://doi.org/10.1149/1.3518701
Abstract
This article investigates the resistance switching behaviors of a device with a structure. By inserting a Cu ultrathin film between the SiON layer and the Pt top electrode, the device exhibits bipolar resistive switching characteristics after a forming process at . However, the forming and resistive switching process cannot be observed in the device if the Cu thin film is omitted. Additionally, we employ a two-step forming process to reduce the forming voltage to . The proposed device also demonstrates stable resistance states during cycling bias pulse operations and acceptable retention characteristics after an endurance test at .Keywords
This publication has 17 references indexed in Scilit:
- Transparent resistive random access memory and its characteristics for nonvolatile resistive switchingApplied Physics Letters, 2008
- Who Wins the Nonvolatile Memory Race?Science, 2008
- Resistance Switching Behaviors of Hafnium Oxide Films Grown by MOCVD for Nonvolatile Memory ApplicationsJournal of the Electrochemical Society, 2008
- Nanoionics-based resistive switching memoriesNature Materials, 2007
- Reproducible unipolar resistance switching in stoichiometric ZrO2 filmsApplied Physics Letters, 2007
- Influence of oxygen content on electrical properties of NiO films grown by rf reactive sputtering for resistive random-access memory applicationsJournal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 2006
- Highly scalable non-volatile resistive memory using simple binary oxide driven by asymmetric unipolar voltage pulsesPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2005
- Non‐Volatile Polymer Memory Device Based on a Novel Copolymer of N‐Vinylcarbazole and Eu‐Complexed VinylbenzoateAdvanced Materials, 2005
- Resistive switching in metal–ferroelectric–metal junctionsApplied Physics Letters, 2003
- Reproducible switching effect in thin oxide films for memory applicationsApplied Physics Letters, 2000