Memory characteristics of Co nanocrystal memory device with HfO2 as blocking oxide
- 26 March 2007
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 90 (13), 132102
- https://doi.org/10.1063/1.2716845
Abstract
In this letter, the Co nanocrystals using and as the tunneling and the control dielectric with memory effect has been fabricated. A significant memory effect was observed through the electrical measurements. Under the low voltage operation of , the memory window was estimated to . The retention characteristics were tested to be robust. Also, the endurance of the memory device was not degraded up to write/erase cycles. The processing of the structure is compatible with the current manufacturing technology of semiconductor industry.
Keywords
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