High breakdown GaN HEMT with overlapping gate structure
- 1 September 2000
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters
- Vol. 21 (9), 421-423
- https://doi.org/10.1109/55.863096
Abstract
GaN high electron mobility transistors (HEMTs) were fabricated using an overlapping-gate technique in which the drain-side edge of the metal gate overlaps on a high breakdown and high dielectric constant dielectric. The overlapping structure reduces the electric field at the drain-side gate edge, thus increasing the breakdown of the device. A record-high three-terminal breakdown figure of 570 V was achieved on a HEMT with a gate-drain spacing of 13 /spl mu/m. The source-drain saturation current was 500 mA/mm and the extrinsic transconductance 150 mS/mm.Keywords
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