Piezoelectric charge densities in AlGaN/GaN HFETs
- 1 January 1997
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 33 (14), 1230-1231
- https://doi.org/10.1049/el:19970843
Abstract
New estimates of the piezoelectric charge density at (0001) AlGaN/GaN interfaces are provided. Undoped HFET structures grown by both MBE and MOCVD, on sapphire and SiC substrates, exhibit electron densities of ~5 × 1013 cm–2·xAl (where xAl is the aluminium mol fraction in the AlGaN), which can be attributed to piezoelectric effects. These have a significant influence on the design and behaviour of III-V nitride HFETs.Keywords
This publication has 6 references indexed in Scilit:
- AlGaN/GaN HEMTs grown on SiC substratesElectronics Letters, 1997
- Very high breakdown voltage and large transconductance realized on GaN heterojunction field effect transistorsApplied Physics Letters, 1996
- Determination of lattice polarity for growth of GaN bulk single crystals and epitaxial layersApplied Physics Letters, 1996
- Valence-band discontinuities of wurtzite GaN, AlN, and InN heterojunctions measured by x-ray photoemission spectroscopyApplied Physics Letters, 1996
- Short-channel GaN/AlGaN doped channel heterostructure field effect transistors with 36.1 cutoff frequencyElectronics Letters, 1996
- The influence of the strain-induced electric field on the charge distribution in GaN-AlN-GaN structureJournal of Applied Physics, 1993