Power-limiting breakdown effects in GaAs MESFET's
- 1 August 1981
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 28 (8), 962-970
- https://doi.org/10.1109/t-ed.1981.20467
Abstract
State-of-the-art GaAs MESFET'S exhibit an output power saturation as the input power is increased. Experiments indicated that this power saturation is due to the combined effects of forward gate conduction and reverse gate-to-drain breakdown. This reverse breakdown was studied in detail by performing two-dimensional numerical simulations of planar and recessed-gate FET's. These simulations demonstrated that the breakdown occurs at the drain-side edge of the gate. The results of the numerical simulations suggested a model of the depletion layer configuration which could be solved analytically. This model demonstrated that the breakdown voltage was inversely proportional to the product of the doping level and the active layer thickness.Keywords
This publication has 15 references indexed in Scilit:
- Control of gate—Drain avalanche in GaAs MESFET'sIEEE Transactions on Electron Devices, 1980
- Design criteria for GaAs MESFETs related to stationary high field domainsSolid-State Electronics, 1980
- Prebreakdown phenomena in GaAs epitaxial layers and FET'sIEEE Transactions on Electron Devices, 1980
- Channel current limitations in GaAs MESFETSSolid-State Electronics, 1979
- Graded channel FET's: Improved linearity and noise figureIEEE Transactions on Electron Devices, 1978
- Microwave semiconductor devices: State-of-the-art and limiting effectsPublished by Institute of Electrical and Electronics Engineers (IEEE) ,1978
- Saturation velocity of electrons in GaAsIEEE Transactions on Electron Devices, 1976
- Comparison of the hot electron-diffusion rates for GaAs and InPElectronics Letters, 1973
- Transport Properties of GaAsPhysical Review B, 1968
- Avalanche Breakdown in Gallium ArsenideJunctionsPhysical Review B, 1962