Highly Conductive and Transparent Aluminum Doped Zinc Oxide Thin Films Prepared by RF Magnetron Sputtering
- 1 May 1984
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 23 (5A), L280
- https://doi.org/10.1143/jjap.23.l280
Abstract
Highly conductive films of Al-doped ZnO have been prepared by rf magnetron sputtering of a ZnO target with Al2O3 dopant of 1–2 wt% in content added. Films with resistivity as low as 2×10-4 Ωcm and transmittance above 80% at the wavelength between 400 and 800 nm can be produced on low temperature substrate with a relatively high deposition rate. It is shown that a stable resistivity for use in various ambients at high temperature can be attained for the films. The characteristic features of Al-doped ZnO films are their high carrier concentration and low mobility in comparison with non-doped ZnO films.Keywords
This publication has 7 references indexed in Scilit:
- Electrical and optical properties of zinc oxide thin films prepared by rf magnetron sputtering for transparent electrode applicationsJournal of Applied Physics, 1984
- The stability of zinc oxide transparent electrodes fabricated by R.F. magnetron sputteringThin Solid Films, 1984
- Transparent and Highly Conductive Films of ZnO Prepared by RF SputteringJapanese Journal of Applied Physics, 1983
- Highly conductive and transparent zinc oxide films prepared by rf magnetron sputtering under an applied external magnetic fieldApplied Physics Letters, 1982
- Transparent and highly conductive films of ZnO prepared by rf reactive magnetron sputteringApplied Physics Letters, 1981
- Absorption edge shift in ZnO thin films at high carrier densitiesSolid State Communications, 1981
- Zinc phosphide-zinc oxide heterojunction solar cellsApplied Physics Letters, 1981