Abstract
Highly conductive films of zinc oxide have been prepared by rf magnetron sputtering deposition on a substrate suspended perpendicular to the target under an applied external magnetic field in pure argon gas. It is shown that a film with low resistivity (5×10−4 Ω cm) and high optical transmission (>85% between 400 and 800 nm) can be produced on low-temperature substrates with a relatively high deposition rate. The sheet resistance and Hall mobility of the film are 10 Ω/⧠ and 120 cm2/Vs respectively. The high conductivity is achieved by an increase in Hall mobility due to improved crystallization.