Absorption edge shift in ZnO thin films at high carrier densities
- 30 September 1981
- journal article
- Published by Elsevier BV in Solid State Communications
- Vol. 39 (12), 1269-1271
- https://doi.org/10.1016/0038-1098(81)90224-6
Abstract
No abstract availableThis publication has 13 references indexed in Scilit:
- Band tailing in heavily doped semiconductors. Scattering and impurity-concentration-fluctuation effectsPhysical Review B, 1981
- Influence of defects on the electronic structure of zinc oxide surfacesPhysical Review B, 1980
- Relationship Between Deposition Conditions and Physical Properties of Sputtered ZnOJournal of the Electrochemical Society, 1980
- Photovoltaic effect and temperature dependence of the energy gap in the In1−x GaxSb alloy systemCanadian Journal of Physics, 1980
- Electroreflectance at a Semiconductor-Electrolyte InterfacePhysical Review B, 1967
- Some Optical Properties of Group II–VI Semiconductors (II)Physica Status Solidi (b), 1965
- Optical Absorption of Arsenic-Doped Degenerate GermaniumPhysical Review B, 1962
- The exciton spectrum of zinc oxideJournal of Physics and Chemistry of Solids, 1960
- Impurity Band in Semiconductors with Small Effective MassPhysical Review B, 1955
- Anomalous Optical Absorption Limit in InSbPhysical Review B, 1954