Theory of ballistic nanotransistors
- 26 August 2003
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 50 (9), 1853-1864
- https://doi.org/10.1109/ted.2003.815366
Abstract
Numerical simulations are used to guide the development of a simple analytical theory for ballistic field-effect transistors. When two-dimensional (2-D) electrostatic effects are small (and when the insulator capacitance is much less than the semiconductor (quantum) capacitance), the model reduces to Natori's theory of the ballistic MOSFET. The model also treats 2-D electrostatics and the quantum capacitance limit where the semiconductor quantum capacitance is much less than the insulator capacitance. This new model provides insights into the performance of MOSFETs near the scaling limit and a unified framework for assessing and comparing a variety of novel transistors.Keywords
This publication has 31 references indexed in Scilit:
- Simulating quantum transport in nanoscale mosfets: ballistic hole transport, subband engineering and boundary conditionsIEEE Transactions on Nanotechnology, 2003
- A computational study of thin-body, double-gate, Schottky barrier MOSFETsIEEE Transactions on Electron Devices, 2002
- The ballistic FET: design, capacitance and speed limitPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2002
- Carbon Nanotubes as Schottky Barrier TransistorsPhysical Review Letters, 2002
- Single-walled carbon nanotube electronicsIEEE Transactions on Nanotechnology, 2002
- Vertical scaling of carbon nanotube field-effect transistors using top gate electrodesApplied Physics Letters, 2002
- On experimental determination of carrier velocity in deeply scaled NMOS: how close to the thermal limit?IEEE Electron Device Letters, 2001
- Role of Fermi-Level Pinning in Nanotube Schottky DiodesPhysical Review Letters, 2000
- Universal Density of States for Carbon NanotubesPhysical Review Letters, 1998
- SB-IGFET: An insulated-gate field-effect transistor using Schottky barrier contacts for source and drainProceedings of the IEEE, 1968