A computational study of thin-body, double-gate, Schottky barrier MOSFETs
- 16 December 2002
- journal article
- research article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 49 (11), 1897-1902
- https://doi.org/10.1109/ted.2002.804696
Abstract
Nanoscale Schottky barrier MOSFETs (SBFETs) are explored by solving the two-dimensional Poisson equation self-consistently with a quantum transport equation. The results show that for SBFETs; with positive, effective metal-semiconductor barrier heights, the on-current is limited by tunneling through a barrier at the source. If, however, a negative metal-semiconductor barrier height could be achieved, on-current of SBFETs would approach that of a ballistic MOSFET. The reason is that the gate voltage would then modulate a thermionic barrier rather than a tunneling barrier, a process similar to ballistic MOSFETs and one that delivers more current.Keywords
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