The ballistic FET: design, capacitance and speed limit
- 13 November 2002
- conference paper
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
Abstract
No abstract availableThis publication has 4 references indexed in Scilit:
- Ultra-short 25-nm-gate lattice-matched InAlAs/InGaAs HEMTs within the range of 400 GHz cutoff frequencyIEEE Electron Device Letters, 2001
- On experimental determination of carrier velocity in deeply scaled NMOS: how close to the thermal limit?IEEE Electron Device Letters, 2001
- Ballistic metal-oxide-semiconductor field effect transistorJournal of Applied Physics, 1994
- Physics at the limits of VLSI scalingAIP Conference Proceedings, 1984