Room-Temperature Low-Threshold Surface-Stimulated Emission by Optical Pumping from Al0.1Ga0.9N/GaN Double Heterostructure
- 1 July 1993
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 32 (7B), L1000
- https://doi.org/10.1143/jjap.32.l1000
Abstract
The difference in the refractive index at around λ=0.37 µm between GaN and Al0.1Ga0.9N is found to be about 0.19. With use of AlGaN/GaN double heterostructures, the threshold power for surface-stimulated emission by optical pumping at room temperature has been markedly decreased to about one-twentieth that of a bulk GaN layer. The mechanism of the stimulated emission in this system is discussed.Keywords
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