Effects of ain buffer layer on crystallographic structure and on electrical and optical properties of GaN and Ga1−AlN (0 < x ≦ 0.4) films grown on sapphire substrate by MOVPE
- 1 November 1989
- journal article
- Published by Elsevier BV in Journal of Crystal Growth
- Vol. 98 (1-2), 209-219
- https://doi.org/10.1016/0022-0248(89)90200-5
Abstract
No abstract availableFunding Information
- Ministry of Education, Culture, Sports, Science and Technology
This publication has 6 references indexed in Scilit:
- A new technique for crystallographic characterization of heteroepitaxial crystal filmsJournal of Applied Physics, 1988
- Zn related electroluminescent properties in MOVPE grown GaNJournal of Crystal Growth, 1988
- Energy band-gap bowing parameter in an AlxGa1−x N alloyJournal of Applied Physics, 1987
- Edge emission of AlxGa1−xNSolid State Communications, 1986
- Epitaxial Growth and Properties of Al x Ga1 − x N by MOVPEJournal of the Electrochemical Society, 1986
- Metalorganic vapor phase epitaxial growth of a high quality GaN film using an AlN buffer layerApplied Physics Letters, 1986