Heteroepitaxial Growth and the Effect of Strain on the Luminescent Properties of GaN Films on (11 2̄0) and (0001) Sapphire Substrates
- 1 August 1988
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 27 (8A), L1384
- https://doi.org/10.1143/jjap.27.l1384
Abstract
GaN films grown on (11 2̄0) and (0001) sapphire substrates are characterized by X-ray Bond's method and the low temperature photoluminescence measurement. The GaN films are found to be strained by the biaxial compressive stress. From the measured strain and the shift of PL peak energy, the deformation potential of GaN (the relation between the strain parallel to the c-axis and the band gap energy) is found to be 12 eV. The origin of this compressive stress is discussed.Keywords
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