First demonstration of drain current enhancement in SOI tunnel FET with vertical-tunnel-multiplication
- 1 October 2012
- conference paper
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE) in 2012 IEEE International SOI Conference (SOI)
Abstract
CMOS tunnel FETs (TFETs) with vertical-tunnel-multiplication (VTM) were fabricated. VTM TFETs initiate band-to-band tunneling (BTBT) parallel to the gate electric field and effectively extend the tunnel area. Impact of the VTM was analyzed using a distributed-element circuit model, and the drain current multiplication by extended tunnel area was experimentally revealed for the first time.Keywords
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