High-transconductance p-type SiGe modulation-doped field-effect transistor
- 1 January 1995
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 31 (8), 680-681
- https://doi.org/10.1049/el:19950453
Abstract
High-transconductance 1.5 µm-gate-length p-type modulation-doped field-effect transistors (MODFETs) have been fabricated using standard optical lithography on a high hole-mobility SiGe heterostructure grown by ultrahigh vacuum chemical vapour deposition (UHV-CVD). A maximum DC extrinsic (intrinsic) transconductance of 95 mS/mm (138 mS/mm) at room temperature has been achieved, which to our knowledge is the highest for p-type field-effect transistors at this gate length. A unity current-gain frequency ft of 2.1 GHz has been measured. The gate leakage current was quite low and was of the order of a few µA/mm. These enhancement-mode devices exhibit reasonable pinch-off characteristics.Keywords
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