p-type SiGe channel modulation doped field-effect transistors with post-evaporation patterned submicrometre Schottky gates

Abstract

Schottky gate biased p-type MODFETs with an Si0.03Ge0.35 channel are presented. A wet-chemical post-evaporation procedure of the Schottky gates allows the reduction of the gate length LG to submicrometre dimensions (0.5 μm). The gate length dependence of the transconductance gme and gmi is reported. Maximum values are 37 or 103mS/mm at 300 or 77 K. The devices work in the enhancement mode.