Complementary metal-oxide-semiconductor-compatible and self-aligned catalyst formation for carbon nanotube synthesis and interconnect fabrication
- 15 March 2012
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 111 (6), 064310
- https://doi.org/10.1063/1.3694678
Abstract
We have for the first time developed a self-aligned metal catalyst formation process using fully CMOS (complementary metal-oxide-semiconductor) compatible materials and techniques, for the synthesis of aligned carbon nanotubes (CNTs). By employing an electrically conductive cobalt disilicide (CoSi2) layer as the starting material, a reactive ion etch (RIE) treatment and a hydrogen reduction step are used to transform the CoSi2 surface into cobalt (Co) nanoparticles that are active to catalyze aligned CNT growth. Ohmic contacts between the conductive substrate and the CNTs are obtained. The process developed in this study can be applied to form metal nanoparticles in regions that cannot be patterned using conventional catalyst deposition methods, for example at the bottom of deep holes or on vertical surfaces. This catalyst formation method is crucially important for the fabrication of vertical and horizontal interconnect devices based on CNTs.Keywords
This publication has 46 references indexed in Scilit:
- Improvement in Electrical Properties of Carbon Nanotube Via InterconnectsJapanese Journal of Applied Physics, 2011
- Capacitive nanoelectromechanical switch based on suspended carbon nanotube arrayApplied Physics Letters, 2010
- High-speed graphene transistors with a self-aligned nanowire gateNature, 2010
- Carbon nanotubes grown using cobalt silicide as catalyst and hydrogen pretreatmentMicroelectronic Engineering, 2005
- Effects of various Co/TiN and Co/Ti layer stacks and the salicide rapid thermal process conditions on cobalt silicide formationMicroelectronic Engineering, 2004
- Obtaining silicide free spacers by optimizing sputter etch for deep submicron CMOS processesIEEE Transactions on Semiconductor Manufacturing, 2002
- Self-Oriented Regular Arrays of Carbon Nanotubes and Their Field Emission PropertiesScience, 1999
- History of some early developments in ion-implantation technology leading to silicon transistor manufacturingProceedings of the IEEE, 1998
- Surface processes occurring on TiSi2 and CoSi2 in fluorine-based plasmas: Afterglow of a NF3 plasmaJournal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 1998
- A survey on the reactive ion etching of silicon in microtechnologyJournal of Micromechanics and Microengineering, 1996