Effect of Top Electrode Materials on the Nonvolatile Resistive Switching Characteristics of CCTO Films
- 28 February 2011
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Magnetics
- Vol. 47 (3), 633-636
- https://doi.org/10.1109/tmag.2010.2101584
Abstract
A novel material CaCu3Ti4O12 (CCTO) for resistive random access memory (RRAM) application was prepared by sol-gel spin coating method. Our previous studies indicated that the CCTO possesses stable resistive switching behavior. In this work, the effects of the top electrode (TE) material on the resistive switching characteristics of CCTO films are investigated. It indicates the work function of the TE is an important factor on the resistive switching properties. Successive resistive switching was observed for electrode materials of Ni, Pd, and Pt. Furthermore, optimized consideration of the electrode material for RRAM is also studied.Keywords
This publication has 15 references indexed in Scilit:
- Asymmetric bipolar resistive switching in solution-processed Pt/TiO2/W devicesJournal of Physics D: Applied Physics, 2010
- Magnetic Random Accessible Memory Based Magnetic Content Addressable Memory Cell DesignIEEE Transactions on Magnetics, 2010
- Power and Area Optimization for Run-Time Reconfiguration System On Programmable Chip Based on Magnetic Random Access MemoryIEEE Transactions on Magnetics, 2009
- Impedance Spectroscopy of CaCu[sub 3]Ti[sub 4]O[sub 12] Films Showing Resistive SwitchingJournal of the Electrochemical Society, 2009
- Effects of annealing temperature on the resistance switching behavior of CaCu3Ti4O12 filmsThin Solid Films, 2008
- P -type semiconducting gas sensing behavior of nanoporous rf sputtered CaCu3Ti4O12 thin filmsApplied Physics Letters, 2008
- Electrical Properties and Fatigue Behaviors of ZrO[sub 2] Resistive Switching Thin FilmsJournal of the Electrochemical Society, 2008
- Thickness-dependent microstructures and electrical properties of CaCu3Ti4O12 films derived from sol–gel processThin Solid Films, 2007
- Modified resistive switching behavior of ZrO2 memory films based on the interface layer formed by using Ti top electrodeJournal of Applied Physics, 2007
- Properties of silicon-metal contacts versus metal work-function, silicon impurity concentration and bias voltageJournal of Physics D: Applied Physics, 1976