Magnetic Random Accessible Memory Based Magnetic Content Addressable Memory Cell Design

Abstract

In this paper, we present a novel magnetic content addressable memory (MCAM) cell architecture. The proposed MCAM cell consists of four magnetic tunneling junction devices (MTJs). All previously proposed MCAM cell designs require both magnets of MTJ to be programmable. Such requirement poses a great challenge on device fabrication. This paper describe a new design based on conventional MTJs used in magnetic random accessible memory, i.e., only the top magnet is programmable while the bottom magnet is pinned. The feasibility of this design comes from the circuit connections based on the unique operation features of content addressable memory and the MTJs. The feasibility of the proposed operation has been demonstrated by numerical simulation.