Low V_pp, ultralow-energy, compact, high-speed silicon electro-optic modulator
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- 24 November 2009
- journal article
- Published by Optica Publishing Group in Optics Express
- Vol. 17 (25), 22484-22490
- https://doi.org/10.1364/oe.17.022484
Abstract
We present a high-speed silicon optical modulator with a low Vpp (peak-to-peak driving voltage) and ultralow energy consumption based on a microring resonator, with the refractive index modulation achieved by electric-field-induced carrier depletion in a reverse-biased lateral pn diode embedded in the ring structure. With a Vpp of 2 V, we demonstrate a silicon modulator with a 3 dB bandwidth of 11 GHz, a modulation depth of 6.5 dB together with an insertion loss of 2 dB, ultralow energy consumption of 50 fJ per bit, and a small device active area of ~1000 µm2.This publication has 17 references indexed in Scilit:
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