125 Gbps optical modulation of silicon racetrack resonator based on carrier-depletion in asymmetric p-n diode
- 23 October 2008
- journal article
- Published by Optica Publishing Group in Optics Express
- Vol. 16 (22), 18340-4
- https://doi.org/10.1364/oe.16.018340
Abstract
We present a high speed optical modulation using carrier depletion effect in an asymmetric silicon p-n diode resonator. To optimize coupling efficiency and reduce bending loss, two-step-etched waveguide is used in the racetrack resonator with a directional coupler. The quality factor of the resonator with a circumference of 260 um is 9,482, and the DC on/off ratio is 8 dB at -12V. The device shows the 3dB bandwidth of approximately8 GHz and the data transmission up to 12.5Gbit/s.This publication has 10 references indexed in Scilit:
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