Characteristics of bulk InGaAsSbN/GaAs grown by metalorganic vapor phase epitaxy (MOVPE)
- 1 May 2013
- journal article
- Published by Elsevier BV in Journal of Crystal Growth
- Vol. 370, 163-167
- https://doi.org/10.1016/j.jcrysgro.2012.06.043
Abstract
No abstract availableThis publication has 17 references indexed in Scilit:
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