Narrow band gap (1 eV) InGaAsSbN solar cells grown by metalorganic vapor phase epitaxy
- 19 March 2012
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 100 (12), 121120
- https://doi.org/10.1063/1.3693160
Abstract
Heterojunction solar cell structures employing InGaAsSbN (Eg ∼ 1 eV) base regions are grown lattice-matched to GaAs substrates using metalorganic vapor phase epitaxy. Room temperature (RT) photoluminescence (PL) measurements indicate a peak spectral emission at 1.04 eV and carrier lifetimes of 471–576 ps are measured at RT from these structures using time-resolved PL techniques. Fabricated devices without anti-reflection coating demonstrate a peak efficiency of 4.58% under AM1.5 direct illumination. Solar cells with a 250 nm-thick InGaAsSbN base layer exhibit a 17% improvement in open circuit voltage (Voc), 14% improvement in fill factor, and 12% improvement in efficiency over the cells with a thicker (500 nm-thick) base layer.Keywords
This publication has 14 references indexed in Scilit:
- Narrow band gap GaInNAsSb material grown by metal organic vapor phase epitaxy (MOVPE) for solar cell applicationsJournal of Crystal Growth, 2011
- Growth, Fabrication, and Characterization of InGaAsN Double Heterojunction Solar CellsJapanese Journal of Applied Physics, 2011
- Fabrication of homojunction GaInNAs solar cells by atomic hydrogen-assisted molecular beam epitaxySolar Energy Materials and Solar Cells, 2009
- Optimization of annealing conditions of (GaIn)(NAs) for solar cell applicationsJournal of Crystal Growth, 2008
- Carbon Reduction in GaAsN Thin Films by Flow-Rate-Modulated Chemical Beam EpitaxyJapanese Journal of Applied Physics, 2008
- Solar cells with (BGaIn)As and (InGa)(NAs) as absorption layersJournal of Crystal Growth, 2004
- Comparison of dilute nitride growth on a single- and 8×4-inch multiwafer MOVPE system for solar cell applicationsJournal of Crystal Growth, 2004
- Trap-dominated minority-carrier recombination in GaInNAs pn junctionsApplied Physics Letters, 2003
- InGaAsN solar cells with 1.0 eV band gap, lattice matched to GaAsApplied Physics Letters, 1999
- 1-eV solar cells with GaInNAs active layerJournal of Crystal Growth, 1998