DOUBLE-HETEROSTRUCTURE INJECTION LASERS WITH ROOM-TEMPERATURE THRESHOLDS AS LOW AS 2300 A/cm2
- 15 April 1970
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 16 (8), 326-327
- https://doi.org/10.1063/1.1653213
Abstract
Double‐heterostructure AlxGa1−xAs–GaAs– AlxGa1−xAs injection lasers with room‐temperature thresholds as low as 2300 A/cm2 have been prepared by solution epitaxy. These lasers have high gain and a low temperature coefficient of the threshold up to the highest temperatures measured, 380 °K.Keywords
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