GaAs junction lasers containing the amphoteric dopants Ge and Si
- 28 February 1970
- journal article
- Published by Elsevier BV in Solid-State Electronics
- Vol. 13 (2), 199-205
- https://doi.org/10.1016/0038-1101(70)90052-3
Abstract
No abstract availableKeywords
This publication has 6 references indexed in Scilit:
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- A low-threshold room-temperature injection laserIEEE Journal of Quantum Electronics, 1969
- A technique for the preparation of low-threshold room-temperature GaAs laser diode structuresIEEE Journal of Quantum Electronics, 1969
- LASER TRANSITION TO BAND EDGE OR TO IMPURITY STATES IN GaAs:GeApplied Physics Letters, 1969
- EFFICIENT ELECTROLUMINESCENCE FROM GaAs DIODES AT 300°KApplied Physics Letters, 1966
- STIMULATED EMISSION OF EXCITON RECOMBINATION RADIATION IN GaAs p-n JUNCTIONSApplied Physics Letters, 1963