Ga-Al-As: Phase, thermodynamic and optical properties
- 1 January 1969
- journal article
- Published by Elsevier BV in Journal of Physics and Chemistry of Solids
- Vol. 30 (1), 129-137
- https://doi.org/10.1016/0022-3697(69)90345-x
Abstract
No abstract availableThis publication has 14 references indexed in Scilit:
- Luminescence of zinc doped solution grown GaAs: the effect of arsenic pressureJournal of Physics and Chemistry of Solids, 1968
- EFFICIENT VISIBLE ELECTROLUMINESCENCE AT 300°K FROM Ga1-xAlxAs p-n JUNCTIONS GROWN BY LIQUID-PHASE EPITAXYApplied Physics Letters, 1967
- Luminescence of zinc doped solution grown gallium arsenideJournal of Physics and Chemistry of Solids, 1967
- Injection Electroluminescence in (AlxGa1−x)As Diodes of Graded Energy GapJournal of Applied Physics, 1966
- Photoluminescence and solution growth of gallium arsenideSolid-State Electronics, 1966
- The gallium-arsenic-zinc systemJournal of Physics and Chemistry of Solids, 1966
- Preparation and Properties of AlAs-GaAs Mixed CrystalsJournal of the Electrochemical Society, 1966
- Optical gain and losses of epitaxial and diffused GaAs injection lasersIEEE Journal of Quantum Electronics, 1965
- Phase equilibria in the GaAs and the GaP systemsJournal of Physics and Chemistry of Solids, 1965
- TEMPERATURE DEPENDENCE OF THRESHOLD CURRENT IN GaAs LASERSApplied Physics Letters, 1964