High aspect ratio silicon etch: A review
- 1 September 2010
- journal article
- review article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 108 (5)
- https://doi.org/10.1063/1.3474652
Abstract
No abstract availableKeywords
This publication has 105 references indexed in Scilit:
- Dependence of etch rates of silicon substrates on the use of C4F8 and C4F6 plasmas in the deposition step of the Bosch processJournal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 2009
- Aspect ratio dependent etching lag reduction in deep silicon etch processesJournal of Vacuum Science & Technology A, 2006
- Refractive Variable Optical Attenuator Fabricated by Silicon Deep Reactive Ion EtchingIEEE Photonics Technology Letters, 2004
- Fabrication of high-density electrical feed-throughs by deep-reactive-ion etching of Pyrex glassJournal of Microelectromechanical Systems, 2002
- Balancing the etching and passivation in time-multiplexed deep dry etching of siliconJournal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 2001
- The application of secondary effects in high aspect ratio dry etching for the fabrication of MEMSMicroelectronic Engineering, 2001
- Fabrication of two-dimensional photonic crystal waveguides for 1.5 μm in silicon by deep anisotropic dry etchingJournal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 1999
- Characterization of a Time Multiplexed Inductively Coupled Plasma EtcherJournal of the Electrochemical Society, 1999
- BSM 7: RIE lag in high aspect ratio trench etching of siliconMicroelectronic Engineering, 1997
- Low temperature etching of Si in high density plasma using SF6/O2Microelectronic Engineering, 1995