Robust Pattern Transfer of Nanoimprinted Features for Sub-5-nm Fabrication
- 1 September 2009
- journal article
- letter
- Published by American Chemical Society (ACS) in Nano Letters
- Vol. 9 (10), 3629-3634
- https://doi.org/10.1021/nl9018512
Abstract
We explore the limits of a simple and facile process for transferring low aspect ratio, high-resolution features defined by nanoimprint lithography. The process involves postimprint deposition of an angle-evaporated hard mask. This widens the process window for residual resist removal and facilitates easy liftoff. An added benefit is a concomitant reduction of feature size. A postliftoff annealing step produces high pattern uniformity and additional feature size reduction. The process is extremely robust, and it enables relatively straightforward fabrication of sub-5-nm spherical structures. It is extendible to rectilinear patterns as well.Keywords
This publication has 19 references indexed in Scilit:
- Fabrication of nanoscale bioarrays for the study of cytoskeletal protein binding interactions using nanoimprint lithographyJournal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 2009
- Direct stamp fabrication for NIL and hot embossing using HSQMicroelectronic Engineering, 2007
- Deposition and patterning of diamondlike carbon as antiwear nanoimprint templatesJournal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 2006
- Circuit Fabrication at 17 nm Half-Pitch by Nanoimprint LithographyNano Letters, 2006
- Fabrication and surface chemistry of nanoscale bioarrays designed for the study of cytoskeletal protein binding interactions and their effect on cell motilityJournal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 2005
- Development of an etch-definable lift-off process for use with step and flash imprint lithographyPublished by SPIE-Intl Soc Optical Eng ,2005
- Polymer Imprint Lithography with Molecular-Scale ResolutionNano Letters, 2004
- Patterning curved surfaces: Template generation by ion beam proximity lithography and relief transfer by step and flash imprint lithographyJournal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 1999
- Three-dimensional siloxane resist for the formation of nanopatterns with minimum linewidth fluctuationsJournal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 1998
- Imprint of sub-25 nm vias and trenches in polymersApplied Physics Letters, 1995