Three-dimensional siloxane resist for the formation of nanopatterns with minimum linewidth fluctuations
- 1 January 1998
- journal article
- Published by American Vacuum Society in Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
- Vol. 16 (1), 69-76
- https://doi.org/10.1116/1.589837
Abstract
No abstract availableThis publication has 11 references indexed in Scilit:
- Nanometer-scale linewidth fluctuations caused by polymer aggregates in resist filmsApplied Physics Letters, 1997
- Nano-scale fluctuations in electron beam resist pattern evaluated by atomic force microscopyMicroelectronic Engineering, 1996
- An Electron Beam Nanolithography System and its Application to Si NanofabricationJapanese Journal of Applied Physics, 1995
- Synthesis and structure of titanium tetrathiolate and tantalum pentathiolate complexes. Metal-sulfur bonding in early transition metal compoundsInorganica Chimica Acta, 1995
- Nano edge roughness in polymer resist patternsApplied Physics Letters, 1993
- Fabrication of 5–7 nm wide etched lines in silicon using 100 keV electron-beam lithography and polymethylmethacrylate resistApplied Physics Letters, 1993
- Nanometer scale pattern replication using electron beam direct patterned SiO2 as the etching maskApplied Physics Letters, 1991
- On the Mechanism of Plasma Oxidation of PolysiloxaneJournal of the Electrochemical Society, 1989
- Resolution Limits of PMMA Resist for Exposure with 50 kV ElectronsJournal of the Electrochemical Society, 1981
- Oligomeric silsesquioxanes, (HSiO3/2)nJournal of the American Chemical Society, 1970