Metalorganic chemical vapor deposition of N-polar GaN films on vicinal SiC substrates using indium surfactants
- 9 January 2012
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 100 (2), 021913
- https://doi.org/10.1063/1.3676275
Abstract
The effect of indiumsurfactants on the growth of N-polar GaNfilms on vicinal C-face SiC substrates by metalorganic chemical vapor deposition was investigated. Triangular hillocks formed on the surface of N-polar GaN without indium, resulting in a rough surface. When indiumsurfactants were introduced during GaNgrowth, the surface roughness was reduced from 18.1 to 3.5 nm over a 20 × 20 μm2 area. The photoluminescence characteristics of N-polar GaNfilm were also improved because of a reduction of carbon caused by the presence of indium, demonstrating that indium is a useful surfactant in the growth of N-polar GaN.Keywords
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