Morphological and structural characteristics of homoepitaxial GaN grown by metalorganic chemical vapour deposition (MOCVD)
- 31 August 1999
- journal article
- Published by Elsevier BV in Journal of Crystal Growth
- Vol. 204 (4), 419-428
- https://doi.org/10.1016/s0022-0248(99)00217-1
Abstract
No abstract availableThis publication has 37 references indexed in Scilit:
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