Growth mode and surface morphology of a GaN film deposited along the N-face polar direction on c-plane sapphire substrate
- 28 June 2000
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 88 (2), 1158-1165
- https://doi.org/10.1063/1.373791
Abstract
The dependence of polar direction of GaN film on growth conditions has been investigated by changing either the group-V/group-III ratio (V/III ratio) in supplying the source gas or the deposition rate. GaN films were deposited on a nitrided sapphire by two-step metalorganic chemical vapor deposition. The surface morphology changed from flat hexagonal to pyramidal hexagonal facet with the increase of V/III ratio. However, the polar direction of GaN on an optimized buffer layer of 20 nm thickness was N-face polarity, independent of both the V/III ratio and the deposition rate. The polarity of the GaN epitaxtial layer can be determined by that of an interface (nitrided sapphire, annealed buffer layer or GaN substrate) at the deposition of GaN epitaxial layer. The higher V/III ratio enhanced the nucleation density, and reduced the size of hexagonal facets. The nuclei, forming the favorable hexagonal facets of wurtzite GaN, should grow laterally along the directions to cover a room among the facets until coalescence. After coalescence, GaN growth on a flat hexagonal facet results in a pyramidal hexagonal facet. The growth mode for GaN has been discussed with respect to surface structure and migration length of adsorbing precursors, in comparison with Ga-face GaN.
Keywords
This publication has 45 references indexed in Scilit:
- Influence of Thermal Annealing on GaN Buffer Layers and the Property of Subsequent GaN Layers Grown by Metalorganic Chemical Vapor DepositionJapanese Journal of Applied Physics, 1999
- Mechanisms of lateral epitaxial overgrowth of gallium nitride by metalorganic chemical vapor depositionJournal of Crystal Growth, 1998
- Simulation of the Piezoelectric Effect on the Device Characteristics of AlGaN/GaN Insulated-Gate Heterostructure Field Effect TransistorsJapanese Journal of Applied Physics, 1998
- Structural investigation of sapphire surface after nitridationJournal of Crystal Growth, 1998
- Dislocation generation in GaN heteroepitaxyJournal of Crystal Growth, 1998
- Terminating Structure of Plasma-Assisted Molecular Beam Epitaxial GaN{0001} Film Surface Identified by Coaxial Impact Collision Ion Scattering SpectroscopyJapanese Journal of Applied Physics, 1998
- Localized Donors in Gan: Spectroscopy Using Large PressuresMRS Proceedings, 1997
- GaN growth by a controllable RF-excited nitrogen sourceJournal of Crystal Growth, 1995
- Fabrication of Highly Stable and Low Defect Density Amorphous Silicon Films at Low Substrate Temperature by Plasma Chemical Vapor Deposition Assisted with Piezoelectric VibrationJapanese Journal of Applied Physics, 1995
- Growth of AlN/GaN layered structures by gas source molecular-beam epitaxyJournal of Vacuum Science & Technology B, 1990