Measurement of Enhanced Gate-Controlled Band-to-Band Tunneling in Highly Strained Silicon-Germanium Diodes
- 22 April 2008
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters
- Vol. 29 (5), 468-470
- https://doi.org/10.1109/led.2008.920280
Abstract
Strained silicon-germanium (Si0.6Ge0.4) gated diodes have been fabricated and analyzed. The devices exhibit significantly enhanced gate-controlled tunneling current over that of coprocessed silicon control devices. The current characteristics are insensitive to measurement temperature in the 80 K to 300 K range. Independently extracted valence band offset at the strained Si0.6Ge0.4/Si interface is 0.4 eV, yielding a Si0.6Ge0.4 bandgap of 0.7 eV, which is much reduced compared to that of Si. The results are consistent with device operation based on quantum-mechanical band-to-band (BTB) tunneling rather than on thermal generation. Moreover, simulation of the strained Si0.6Ge0.4 device using a quantum-mechanical BTB tunneling model is in good agreement with the measurements.Keywords
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