Reliability issues of Gallium Nitride High Electron Mobility Transistors
- 1 February 2010
- journal article
- Published by Cambridge University Press (CUP) in International Journal of Microwave and Wireless Technologies
- Vol. 2 (1), 39-50
- https://doi.org/10.1017/s1759078710000097
Abstract
In the present paper we review the most recent degradation modes and mechanisms recently observed in AlGaN/GaN (Aluminum Gallium Nitride/Gallium Nitride). High Electron-Mobility Transistors (HEMTs), as resulting from a detailed accelerated testing campaign, based on reverse bias tests and DC accelerated life tests at various temperatures. Despite the large efforts spent in the last few years, and the progress in mean time to failure values, reliability of GaN HEMTs, and millimeter microwave integrated circuits still represent a relevant issue for the market penetration of these devices. The role of temperature in promoting GaN HEMT failure is controversial, and the accelerating degradation factors are largely unknown. The present paper proposes a methodology for the analysis of failure modes and mechanisms of GaN HEMTs, based on (i) DC and RF stress tests accompanied by an (ii) extensive characterization of traps using deep level transient spectroscopy and pulsed measurements, (iii) detailed analysis of electrical characteristics, and (iv) comparison with two-dimensional device simulations. Results of failure analysis using various microscopy and spectroscopy techniques are presented and failure mechanisms observed at the high electric field values typical of the operation of these devices are reviewed.Keywords
This publication has 30 references indexed in Scilit:
- AlGaN/GaN HFET reliabilityIEEE Microwave Magazine, 2009
- Physical degradation of GaN HEMT devices under high drain bias reliability testingMicroelectronics Reliability, 2009
- TEM Observation of Crack- and Pit-Shaped Defects in Electrically Degraded GaN HEMTsIEEE Electron Device Letters, 2008
- Investigation of High-Electric-Field Degradation Effects in AlGaN/GaN HEMTsIEEE Transactions on Electron Devices, 2008
- Electroluminescence characteristics of GaN HEMT at off-statephysica status solidi (c), 2008
- GaN-Based RF Power Devices and AmplifiersProceedings of the IEEE, 2008
- Voltage Dependent Characteristics of 48V AlGaN/GaN High Electron Mobility Transistor Technology on Silicon CarbidePublished by Institute of Electrical and Electronics Engineers (IEEE) ,2007
- A review of failure modes and mechanisms of GaN-based HEMTsPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2007
- Gate Current Degradation Mechanisms of GaN High Electron Mobility TransistorsPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2007
- Verification of electron distributions in silicon by means of hot carrier luminescence measurementsIEEE Transactions on Electron Devices, 1998