High-power 280 nm AlGaN light-emitting diodes based on an asymmetric single-quantum well
- 10 February 2004
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 84 (7), 1046-1048
- https://doi.org/10.1063/1.1647273
Abstract
We demonstrate high-power AlGaN-based ultraviolet light-emitting diodes grown on sapphire with an emission wavelength of 280 nm using an asymmetric single-quantum-well active layer configuration on top of a high-quality AlGaN/AlN template layer. An output power of 1.8 mW at a pulsed current of 400 mA was achieved for a single 300 μm×300 μm diode. This device reached a high peak external quantum efficiency of 0.24% at 40 mA. An array of four diodes produced 6.5 mW at 880 mA of pulsed current.Keywords
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