Milliwatt operation of AlGaN-based single-quantum-well light emitting diode in the ultraviolet region
- 18 June 2001
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 78 (25), 3927-3928
- https://doi.org/10.1063/1.1377854
Abstract
By introducing a single-quantum-well active layer and a high-Al-content carrier blocking layer, the output power of an AlGaN-based ultraviolet light-emitting diode has been improved by one order of magnitude. Optical output of 1 mW was achieved at the emission peak wavelength of 341–343 nm.Keywords
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