IGBT and PN junction diode loss modeling for system simulations
- 1 January 2005
- conference paper
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE International Conference on Electric Machines and Drives, 2005.
Abstract
An accurate and numerically efficient method of calculating semiconductor losses in drive systems is set forth. In the proposed approach, switching events are modeled by idealized voltage and current waveforms that yield the appropriate switching energy loss. The waveforms are specifically designed to allow for large time steps, thus retaining the computational efficiency of conventional ideal-switch time-domain simulations often used for system studiesKeywords
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