Analytical modeling of device-circuit interactions for the power insulated gate bipolar transistor (IGBT)
- 6 January 2003
- conference paper
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
Abstract
No abstract availableKeywords
This publication has 10 references indexed in Scilit:
- An analytical model for the steady-state and transient characteristics of the power insulated-gate bipolar transistorSolid-State Electronics, 1988
- Voltage Clamp Circuits for a Power MOSFET PWM InverterIEEE Transactions on Industry Applications, 1987
- A Performance Trade-Off for the Insulated Gate Bipolar Transistor: Buffer Layer Versus Base Lifetime ReductionIEEE Transactions on Power Electronics, 1987
- IGT/COMFET Latching Characteristics and Application to Brushless DC Motor DriveIEEE Transactions on Aerospace and Electronic Systems, 1986
- The Effect of Neutrons on the Characteristics of the Insulated Gate Bipolar Transistor (IGBT)IEEE Transactions on Nuclear Science, 1986
- The insulated gate transistor: A new three-terminal MOS-controlled bipolar power deviceIEEE Transactions on Electron Devices, 1984
- Insulated gate transistor modeling and optimizationPublished by Institute of Electrical and Electronics Engineers (IEEE) ,1984
- The COMFET—A new high conductance MOS-gated deviceIEEE Electron Device Letters, 1983
- An overview of low-loss snubber technology for transistor convertersPublished by Institute of Electrical and Electronics Engineers (IEEE) ,1982
- The Transport of Added Current Carriers in a Homogeneous SemiconductorPhysical Review B, 1953