P-Channel InGaN-HFET Structure Based on Polarization Doping
- 28 June 2004
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters
- Vol. 25 (7), 450-452
- https://doi.org/10.1109/led.2004.830285
Abstract
A p-channel GaN-based heterostructure field-effect transistor (HFET) concept based on a two-dimensional hole gas (2DHG) induced by polarization doping is presented. The structure employed is a GaN-InGaN-GaN heterostructure without external acceptor doping. The p-channel 2DHG characteristics are verified by operation at low temperature (20 K) and capacitance-voltage profiling. Hall measurements result in a positive Hall-coefficient and indicate a 2DHG hole mobility of approximately 700 cm 2 /Vs at 66 K. For an optimum structure supported by extrinsic doping a simulated output current of approximately 100 mA/mm is predicted for a gate length of 0.5 μm.Keywords
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