p-Channel Enhancement and Depletion Mode GaN-Based HFETs With Quaternary Backbarriers
- 16 July 2013
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 60 (10), 3005-3011
- https://doi.org/10.1109/ted.2013.2272330
Abstract
Within the last years, III-nitride-based devices have been demonstrated with exceptional performance. There is, however, a severe lack of knowledge when it comes fabrication of p-channel devices. p-Channel heterostructure field-effect transistors (HFETs) could open the way for nitride-based complementary logic. Here, a comprehensive study of enhancement and depletion mode p-channel GaN/AlInGaN HFETs is performed. The influence of a highly p-doped GaN cap layer on device performance is investigated. Gate recessing and changes in composition of the backbarrier are analyzed. ON/OFF ratios of up to 108 and subthreshold swings of about 75 mV/decade are achieved.Keywords
This publication has 31 references indexed in Scilit:
- AlN barrier HFETs with AlGaN channels to shift the threshold voltage to higher positive values: a proposalSemiconductor Science and Technology, 2013
- Quaternary nitride enhancement mode HFET with 260 mS/mm and a threshold voltage of +0.5 VPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2012
- 245-GHz InAlN/GaN HEMTs With Oxygen Plasma TreatmentIEEE Electron Device Letters, 2011
- InAlN/GaN HEMTs With AlGaN Back BarriersIEEE Electron Device Letters, 2011
- High Density Two-Dimensional Hole Gas Induced by Negative Polarization at GaN/AlGaN HeterointerfaceApplied Physics Express, 2010
- Effect of Gate Leakage in the Subthreshold Characteristics of AlGaN/GaN HEMTsIEEE Electron Device Letters, 2008
- Determination of two-dimensional electron and hole gas carriers in AlGaN/GaN/AlN heterostructures grown by Metal Organic Chemical Vapor DepositionThin Solid Films, 2008
- GaN/AlGaN p-channel inverted heterostructure JFETIEEE Electron Device Letters, 2002
- AlGaN/GaN HEMTs grown on SiC substratesElectronics Letters, 1997
- Design calculations for submicron gate-length AlGaAs/GaAs modulation-doped FET structures using carrier saturation velocity/charge-control modelSolid-State Electronics, 1985