Strong excitonic transition of Zn1−xMgxO alloy
- 24 December 2007
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 91 (26), 261907
- https://doi.org/10.1063/1.2828031
Abstract
A strong excitonic optical transition in a alloy grown by radical source molecular beam epitaxy was observed using both optical reflectivity measurements and photoluminescence (PL) measurements. Clear and strong reflectance peaks at room temperature (RT) were observed from from ZnMgO layers at RT. Distinct clear PL spectra at RT were also observed for energies up to . The peak intensity of the reflected signal increased for values up to simultaneously with an increase in PL intensity; however, a Stokes shift between the reflectance peak and the PL peak was not observed for values below 0.2. These facts suggest that the oscillator strength of ZnMgO is enhanced by alloying, and the underlying mechanism is discussed. Furthermore, we demonstrate that the strong reflectance properties even at RT provide an easy method to determine the Mg composition of a thin ZnMgO layer in a heterostructure.
Keywords
This publication has 26 references indexed in Scilit:
- Photoluminescence characterization of Zn1−xMgxO epitaxial thin films grown on ZnO by radical source molecular beam epitaxyApplied Physics Letters, 2007
- Quantum Hall Effect in Polar Oxide HeterostructuresScience, 2007
- Two-dimensional electron gas in Zn polar ZnMgO∕ZnO heterostructures grown by radical source molecular beam epitaxyApplied Physics Letters, 2006
- High-performance ZnO∕ZnMgO field-effect transistors using a hetero-metal-insulator-semiconductor structureApplied Physics Letters, 2006
- AlGaN multiple quantum well based deep UV LEDs and their applicationsPhysica Status Solidi (a), 2006
- Characteristics of a Zn0.7Mg0.3O∕ZnO heterostructure field-effect transistor grown on sapphire substrate by molecular-beam epitaxyApplied Physics Letters, 2005
- Piezoelectric Carrier Confinement by Lattice Mismatch at ZnO/Zn0.6Mg0.4O HeterointerfaceJapanese Journal of Applied Physics, 2004
- Milliwatt operation of AlGaN-based single-quantum-well light emitting diode in the ultraviolet regionApplied Physics Letters, 2001
- High field electron transport properties of bulk ZnOJournal of Applied Physics, 1999
- Ultraviolet InGaN and GaN Single-Quantum-Well-Structure Light-Emitting Diodes Grown on Epitaxially Laterally Overgrown GaN SubstratesJapanese Journal of Applied Physics, 1999