Characteristics of a Zn0.7Mg0.3O∕ZnO heterostructure field-effect transistor grown on sapphire substrate by molecular-beam epitaxy
- 8 September 2005
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 87 (11)
- https://doi.org/10.1063/1.2045558
Abstract
No abstract availableKeywords
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